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| (R) STTH20003TV HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ULTRAFAST, SOFT AND NOISE-FREE RECOVERY FOR LOW SIDE EFFECTS ISOLATED PACKAGE: 2500 V RMS (UL APPROVALPENDING DEVICE) LOW INDUCTANCE AND LOW CAPACITANCE ALLOW SIMPLER LAYOUT DESCRIPTION Dual rectifiers suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in ISOTOPTM, this device is intendedfor use in low voltage, high frequency inverters, free wheeling operation, welding equipments and telecom power supplies. 2 x 100 A 300 V 150 C 0.95 V 90 ns K2 A2 A1 A1 A2 K1 K2 K1 ISOTOPTM ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Non Repetitive peak reverse current Storage temperature range Maximum operating junction temperature Tc = 85C = 0.5 Per diode Perdevice Value 300 180 100 200 1000 13 - 55 to + 150 150 Unit V A A A A C C tp = 10 ms sinusoidal tp = 100 s square ISOTOP is a registered trademark of STMicroelectronics May 1999 - Ed: 2C 1/5 STTH20003TV THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) When the diodes 1 and 2 are used simultaneously: Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions VR = 300 V Tj = 25C Tj = 125C IF = 100 A Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation: P = 0.75 x IF(AV) + 0.0020 x IF2(RMS) 0.8 0.2 Min. Typ. Max. 200 2 1.20 0.95 Unit A mA V Parameter Junction to case Per diode Total Coupling Value 0.55 0.35 0.1 Unit C/W VF ** RECOVERY CHARACTERISTICS Symbol trr IF = 0.5 A IF = 1 A tfr VFP Sfactor IRM IF = 100 A VFR = 1.1 x VF max. Vcc = 200 V dIF/dt = 200 A/s IF = 100 A Tj = 125C 0.3 18 Tests Conditions Irr = 0.25 A dIF/dt = - 50 A/s IR = 1A VR = 30 V Tj = 25C Tj = 25C Min. Typ. 55 90 1400 5 ns V A Max. Unit ns dIF/dt = 200 A/s 2/5 STTH20003TV Fig. 1: Conduction losses versus average current (per diode). P1(W) 120 100 = 0.05 = 0.1 = 0.2 = 0.5 =1 Fig. 2: Forward voltage drop versus forward current (Maximum values, per diode). IFM(A) Tj=125C (Typical values) 500 100 Tj=25C 80 60 40 20 IF(av) (A) 0 0 20 40 60 80 =tp/T tp Tj=125C 10 T 100 120 1 0.0 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 Single pulse = 0.5 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence,per diode). IRM(A) 40 35 30 25 20 15 IF=0.5xIF(av) VR=200V Tj=125C IF=2xIF(av) IF=IF(av) = 0.2 = 0.1 T 10 tp(s) 1E-2 1E-1 =tp/T tp 5 0 0 50 0.0 1E-3 dIF/dt(A/s) 100 150 200 250 300 350 400 450 500 1E+0 5E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode). trr(ns) Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values, per diode). S factor VR=200V Tj=125C 260 240 220 200 180 160 140 120 100 80 60 40 20 0 0.6 VR=200V Tj=125C 0.5 0.4 IF=2xIF(av) IF=IF(av) 0.3 IF=0.5xIF(av) 0.2 0.1 dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 0.0 0 50 dIF/dt(A/s) 100 150 200 250 300 350 400 450 500 3/5 STTH20003TV Fig. 7: Relative variation of dynamic parameters versus junction temperature (Reference: Tj=125C). 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence,per diode). VFP(V) 8 S factor 7 6 5 4 3 2 1 100 125 0 0 IF=IF(av) Tj=125C IRM Tj(C) 50 75 dIF/dt(A/s) 50 100 150 200 250 300 350 400 450 500 Fig.9: Forward recovery time versus dIF/dt (90% confidence, per diode). 1000 900 800 700 600 500 400 300 200 100 0 tfr(ns) VFR=1.1 xVF max. IF=IF(av) Tj=125C dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 4/5 STTH20003TV PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Millimeters Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 Cooling method: by conduction (C) Recommended torque value : 1.3 N.m. Maximum torque value: 1.5 N.m. Ordering code Marking STTH20003TV STTH20003TV Epoxy meets UL 94,V0 Package ISOTOP Weight 27g. without screws Base qty 10 with screws Delivery mode Tube Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 5/5 |
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